Method for forming auxiliary conductive unit on transparent electrode of touch sensor and product thereof

ABSTRACT

A method for manufacturing a touch sensor includes the steps of: a) forming both a first touch conductive trail pattern (TCTP) and a first auxiliary conductive trail pattern (ACTP) on a first side of a dielectric substrate; and b) forming both a second TCTP and the second ACTP on a second side of the dielectric substrate, wherein each of the first and second ACTPs has micro auxiliary conductive units electrically disposed in an area range of the first and second TOTPs, and a shading rate of the micro auxiliary conductive units is below 1%. The first and second TCTPs and the first and second ACTPs jointly constitute a touch sensor. A sheet resistance of each of the first and second TCTPs is between 80 and 150 ohm/sq, and a sheet resistance of each of the first and second ACTPs is between 0.05 and 0.2 ohm/sq.

TECHNICAL FIELD

The invention relates to touch sensors, particularly to a method forforming an auxiliary conductive unit on a transparent electrode of atouch sensor and a product thereof.

RELATED ART

Most of currently available touch sensors adopt indium tin oxide (ITO)conductive films as a base material. A touch sensing structure is formedby etching an ITO conductive film to generate touch sensing electrodesand signal wires. Usually, design and manufacture of touch sensors havedifferent requirements to sheet resistance of transparent ITO filmsdepending upon sizes of products. ITO conductive films with differentconditions are needed when producing products with different sizes. As aresult, to satisfy the requirements of touch panels with various sizes,the pressure on the stockpile cost substantially rises, and the issue ofmanufacturing complication also occurs. In addition, optical propertiesof ITO conductive films are approximately inversely proportional toconductivity thereof. In other words, the higher the conductivity (thelower the sheet resistance), the worse the optical properties. Fordesign and manufacture of large-sized touch panels, there is a problemwhich is hard to be solved.

SUMMARY OF THE INVENTION

An object of the invention is to provide a method for forming anauxiliary conductive unit on a transparent electrode of a touch sensor,which can reduce sheet resistance of the touch sensing electrodes andsignal wires without impairing optical properties.

To accomplish the above object, the method of the invention includes thesteps of:

a) preparing a substrate with multiple conductive layers: forming both afirst touch conductive trail pattern and a first auxiliary conductivetrail pattern on a first side of a dielectric substrate; and formingboth a second touch conductive trail pattern and the second auxiliaryconductive trail pattern on a second side of the substrate;

b) performing a first lithography process: forming a first photoresistlayer on the first side of the substrate, and forming a firstphotoresist trail pattern on the first photoresist layer;

c) performing a second lithography process: forming a second photoresistlayer on the second side of the substrate by development, and forming asecond photoresist trail pattern on the second photoresist layer bydevelopment;

d) performing a first etching process: etching the substrate to form afirst touch conductive trail pattern on both the first touch conductivelayer and the first auxiliary conductive layer by using first etchant,and forming a second touch conductive trail pattern on both the secondtouch conductive layer and the second auxiliary conductive layer;

e) performing a first stripping process: removing the first and secondphotoresist layers;

f) performing a third lithography process: forming a third photoresistlayer on the first side of the substrate, and forming a thirdphotoresist trail pattern on the third photoresist layer by development;

g) performing a fourth lithography process: forming a fourth photoresistlayer on the second side of the substrate, and forming a fourthphotoresist trail pattern on the fourth photoresist layer bydevelopment;

h) performing a second etching process: etching the substrate to form afirst auxiliary conductive trail pattern on the first auxiliaryconductive layer by using a second etchant, and forming a secondauxiliary conductive trail pattern on the second auxiliary conductivelayer; and

i) performing a second stripping process: removing the third and fourthphotoresist layers.

By the method of the invention, the first touch conductive trailpattern, the first auxiliary conductive trail pattern, the second touchconductive trail pattern and the second auxiliary conductive trailpattern jointly constitute at least one touch sensor. The firstauxiliary conductive trail pattern is used for reducing sheet resistanceof the first touch conductive trail pattern, the second auxiliaryconductive trail pattern is used for reducing sheet resistance of thesecond touch conductive trail pattern.

The Method has the Following Advantages in Aspects of Design Applicationand Production Manufacture:

1. Preparation of Single Standardized Production Materials

Only both one touch conductive layer with an optimized specification(sheet resistant is about 80-150 ohm/sq and one auxiliary conductivelayer with an optimized specification (sheet resistant is about 0.05-0.2ohm/sq can be applied in most touch panels with different sizes. Thiscan dramatically reduce stock preparation costs and inventory pressure.

2. Improvement of Flexibility and Simplicity of Touch Panel Design

Sheet resistant of the touch conductive trail pattern can be adjustedonly by modifying the auxiliary conductive trail pattern to satisfyvarious requirements of impedance of touch panels with different sizes.

3. Simplification of Production Technology and Increase of ProductionEfficiency of Products

Sheet resistance of the touch conductive trail pattern can be adjustedby forming the auxiliary conductive trail pattern by means of thelithography process to satisfy various requirements of impedance oftouch panels with different sizes. The lithography process is so matureand has high production efficiency.

4. Being Suitable for Design and Production of Large-Sized Touch PanelProducts

The larger the product size, the lower the circuit impedance, sothickness of the ITO conductive film which is used to manufacture thetouch conductive trail pattern must be increased to reduce impedance.This makes its optical properties deteriorate. However, when the touchconductive trail pattern made of an ITO conductive film is associatedwith the auxiliary conductive trail pattern made of copper, conductivitycan be improved without increase of thickness. As a result, nodeterioration of optical properties occurs when being applied inlarge-sized touch panel products.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flowchart of the manufacturing method of the invention;

FIG. 2 is a cross-section view showing forming two conductive layers anda photoresist layer on each side of a substrate of the first embodimentof the invention;

FIG. 3 is a cross-section view of the substrate after performing thefirst and second lithography processes of the first embodiment of theinvention;

FIG. 4 is a cross-section view of the substrate after performing thefirst etching process of the first embodiment of the invention;

FIG. 5 is a cross-section view of the substrate after performing thefirst stripping process of the first embodiment of the invention;

FIG. 6 is a cross-section view of the substrate after forming aphotoresist layer on each side of the substrate of the first embodimentof the invention;

FIG. 7 is a cross-section view of the substrate after performing thethird and fourth lithography processes of the first embodiment of theinvention;

FIG. 8 is a cross-section view of the substrate after performing thesecond etching process of the first embodiment of the invention;

FIG. 9 is a cross-section view of the product of the substrate of thefirst embodiment of the invention;

FIG. 10 is a plan view of the product of the substrate of the firstembodiment of the invention;

FIG. 11 is a plan view of the X-axis touch sensing trail on the firstside of the product of the substrate of the first embodiment of theinvention;

FIG. 12 is a plan view of the first touch conductive trial pattern ofthe product of the first embodiment of the invention;

FIG. 13 is a plan view of the first auxiliary conductive trial patternof the product of the first embodiment of the invention;

FIG. 14 is an enlarged view of portion F in FIG. 11;

FIG. 15 is a plan view of another tiny conductive trial pattern of theproduct of the first embodiment of the invention;

FIG. 16 is a plan view of still another tiny conductive trial pattern ofthe product of the first embodiment of the invention;

FIG. 17 is a plan view of yet another tiny conductive trial pattern ofthe product of the first embodiment of the invention;

FIG. 18 is a plan view of the Y-axis touch sensing trail on the secondside of the product of the substrate of the first embodiment of theinvention;

FIG. 19 is a cross-section view showing forming two conductive layersand a photoresist layer on each side of a substrate of the secondembodiment of the invention;

FIG. 20 is a cross-section view of the substrate after performing thefirst and second lithography processes of the second embodiment of theinvention;

FIG. 21 is a cross-section view of the substrate after performing thefirst etching process of the second embodiment of the invention;

FIG. 22 is a cross-section view of the substrate after performing thefirst stripping process of the second embodiment of the invention;

FIG. 23 is a cross-section view of the substrate after forming aphotoresist layer on each side of the substrate of the second embodimentof the invention;

FIG. 24 is a cross-section view of the substrate after performing thethird and fourth lithography processes of the second embodiment of theinvention;

FIG. 25 is a cross-section view of the substrate after performing thesecond etching process of the second embodiment of the invention;

FIG. 26 is a cross-section view of the product of the substrate of thesecond embodiment of the invention;

FIG. 27 is a plan view of the product of the substrate of the secondembodiment of the invention;

FIG. 28 is a plan view of the X-axis touch sensing trail on the firstside of the product of the substrate of the second embodiment of theinvention; and

FIG. 29 is a plan view of the Y-axis touch sensing trail on the secondside of the product of the substrate of the second embodiment of theinvention.

DETAILED DESCRIPTION OF THE INVENTION The First Embodiment

The first embodiment of the manufacturing method of the invention isdepicted in FIGS. 2-10, and its steps are described below.

Please refer to FIG. 2. First, prepare a dielectric substrate 1 withhigh transmittance. A first touch conductive layer 2 and a firstauxiliary conductive layer 3 are superposed on a first side 1A of thedielectric substrate 1 in order. A second touch conductive layer 4 and asecond auxiliary conductive layer 5 on a second side 1B of thedielectric substrate 1 in order. The first side 1A and the second side1B are two opposite sides of the dielectric substrate 1.

The substrate 1 is made of glass, polycarbonate (PC), polyester (PET),polymethyl methacrylate (PMMA), or cycloolefin copolymer (COC), but notlimited to these, any other flexible, rigid or soft transparentmaterials are also available.

Both the first touch conductive layer 2 and the second touch conductivelayer 4 are two transparent conductive films made of an identicalmaterial, which may be, but not limited to, a metal oxide such as indiumtin oxide, indium zinc oxide, zinc aluminum oxide, tin antimony oxide orpolyethylene dioxythiophenethe or graphene. Preferably, a sheetresistance of each of the first touch conductive layer 2 and the secondtouch conductive layer 4 is between 80 and 150 ohm/sq.

Both the first auxiliary conductive layer 3 and the second auxiliaryconductive layer 5 are two opaque conductive films made of an identicalmaterial, which may be, but not limited to, gold, silver, copper,aluminum, molybdenum, nickel or an alloy thereof. Preferably, sheetresistance of each of the first auxiliary conductive layer and thesecond auxiliary conductive layer is between 0.05 and 0.2 ohm/sq. Asabovementioned, the first auxiliary conductive layer 3 is less than thefirst touch conductive layer 2 in sheet resistance, and the firstauxiliary conductive layer 3 is electrically superposed on the firsttouch conductive layer 2. Identically, the second auxiliary conductivelayer 5 is less than the second touch conductive layer 4 in sheetresistance, and the second auxiliary conductive layer 5 is electricallysuperposed on the second touch conductive layer 4.

In this embodiment, each of the first touch conductive layer 2 and thesecond touch conductive layer 4 adopts an indium tin oxide (ITO) filmwhich has been widely applied in touch panels, and each of the firstauxiliary conductive layer 3 and the second auxiliary conductive layer 5adopts a copper (Cu) film which possesses low impedance (greatconductivity) and cheap price.

As shown in FIGS. 2 and 3, perform a first lithography process to thefirst side 1A of the substrate 1. The first lithography process includesthe following steps: (1) forming a photoresist layer: forming a firstphotoresist layer 6 on the first side 1A of the substrate 1 (i.e. theouter surface of the outermost first auxiliary conductive layer 3) bycoating; (2) baking the photoresist layer: baking the substrate, provinghot wind with about 60° C.˜90° C. to bake the first photoresist layer 6on the substrate 1 for about 100˜140 seconds, and then slowly coolingdown to a normal temperature; (3) exposing the photoresist layer:exposing the first photoresist layer 6, providing an ultraviolet lightsource with irradiation energy about 150˜250 MJ/cm², disposing aphotomask (not shown) with a preset conductive trail pattern between thefirst photoresist layer 6 and the a light source, exposing the firstphotoresist layer 6 with keeping a gap about 30 μm˜80 μm with the firstphotoresist layer 6 to transfer the preset conductive trail pattern onthe photomask onto the first photoresist layer 6; and (4) development ofthe photoresist layer: developing the first photoresist layer 6,spraying a developer to the first photoresist layer 6 with sprayingpressure about 0.5 Kg/cm²′ and then spraying a detergent to the firstphotoresist layer 6 with spraying pressure about 0.5 Kg/cm2 to removeunwanted photoresist material.

A first photoresist trail pattern 6P can be developed to be formed onthe first photoresist layer 6 by the first lithography process.

In addition, a second lithography process is performed on the secondside 1B of the substrate 1. The means for implementing the secondlithography process is identical to the first lithography process, sothe details thereof will not be repeated here. As a result, a secondphotoresist trail pattern 7P can be developed to be formed on the secondphotoresist layer 7 on the second side 1B.

In the first and second lithography processes, the first photoresistlayer 6 is coated on the first auxiliary conductive layer 3 and thesecond photoresist layer 7 is coated on the second auxiliary conductivelayer 5. In other words, the first and second auxiliary conductivelayers 3, 5 are sandwiched between the first photoresist layer 6 and thesecond photoresist layer 7. Because the first and second auxiliaryconductive layers 3, 5 are opaque conductive films (copper films), theoperations of exposure and development of the first and secondphotoresist layers 6, 7 do not interfere with each other. This canincrease processing efficiency.

Please refer to FIG. 4. Next, simultaneously perform a first etchingprocess to the first and second sides 1A, 1B of the substrate 1. Etchthe various conductive layers on the substrate 1 by using a firstetchant to remove portions of material, which are not protected by boththe first photoresist layer 6 and the second photoresist layer 7. Inthis embodiment, wet etching is adopted as an example. Its implementingmanner is: place the substrate 1 in an etching tank, spray the firstetchant onto the first and second sides 1A, 1B of the substrate 1 withspraying pressure about 0.6 Kg/cm², remove portions of material on thefirst touch conductive layer 2 and the first auxiliary conductive layer3 on the first side 1A, which are not protected by the first photoresistlayer 6, and remove portions of material on the second touch conductivelayer 4 and the second auxiliary conductive layer 5 on the second side1B, which are not protected by the second photoresist layer 7. After theetching has been finished, spray washing/neutralizing liquid (such aspure water) with spraying pressure about 1.5 Kg/cm² onto both sides ofthe substrate 1 to wash.

The first etchant is a complex etchant which can etch both the ITOmaterial of both the first touch conductive layer 2 and the second touchconductive layer 4 and the copper material of both the first auxiliaryconductive layer 3 and the second auxiliary conductive layer 5. In thisembodiment, the first etchant at least contains iron nitrate Fe(NO₃)₃and hydrochloric acid (HCl).

Next, perform a first stripping process to remove the first and secondphotoresist layers 6, 7 on the substrate 1. Its means is to spray astripping agent (for example, potassium hydroxide (KOH)) with sprayingpressure about 0.6 Kg/cm² onto the first and second photoresist layers6, 7 to make them stripped from the surfaces of the conductive layersand then spray a detergent (for example, water) with spraying pressureabout 1.5 Kg/cm² onto both sides of the substrate 1.

As shown in FIG. 5, when the first stripping process has been finished,a first touch conductive trail pattern 2P (please refer to FIG. 12)corresponding to the first photoresist trail pattern 6P is formed byetching both the first touch conductive layer 2 and the first auxiliaryconductive layer 3 on the first side 1A. The first touch conductivetrail pattern 2P at least includes a pattern portion of a first touchsensing electrode 21 and a pattern portion of a first signal wire 22. Inthis embodiment, the first touch sensing electrodes 21 are arrangedalong a first direction (i.e. X-axis direction) and connected in series,and each of the first signal wires 22 electrically connects with one ofthe first touch sensing electrodes 21. In addition, a second touchconductive trail pattern 4P corresponding to the second photoresisttrail pattern 7P is formed by etching both the second touch conductivelayer 4 and the second auxiliary conductive layer 5 on the second side1B. The second touch conductive trail pattern 4P at least includes apattern portion of a second touch sensing electrode 41 and a patternportion of a second signal wire 42. In this embodiment, the second touchsensing electrodes 41 are arranged along a second direction (i.e. Y-axisdirection) and connected in series, and each of the second signal wires42 electrically connects with one of the second touch sensing electrodes41.

Please refer to FIGS. 6-7. Next, a third lithography process isperformed on the first side 1A of the substrate 1. The means forimplementing the third lithography process is identical to the firstlithography process, so the details thereof will not be repeated here.As a result, a third photoresist trail pattern 8P can be developed to beformed on the third photoresist layer 8 on the first side 1A. Inaddition, a fourth lithography process is performed on the second side1B of the substrate 1. The means for implementing the fourth lithographyprocess is identical to the first lithography process, so the detailsthereof will not be repeated here. As a result, a fourth photoresisttrail pattern 9P can be developed to be formed on the fourth photoresistlayer 9 on the second side 1B.

In the third and fourth lithography processes, the third photoresisttrail pattern 8P is located in an area range of the first touchconductive trail pattern 2P of the first auxiliary conductive layer 3,and the fourth photoresist trail pattern 9P is located in an area rangeof the second touch conductive trail pattern 4P of the second auxiliaryconductive layer 5. Because the first and second auxiliary conductivelayers 3, 5 are opaque conductive films (copper films), the operationsof exposure and development of the third and fourth photoresist layers8, 9 do not interfere with each other when the third and fourthlithography processes are simultaneously or separately implemented toboth sides 1A, 1B of the substrate 1.

Please refer to FIG. 8. Next, simultaneously perform a second etchingprocess to the first and second sides 1A, 1B of the substrate 1. Etchthe first and the second auxiliary conductive layers 3, 5 on thesubstrate 1 by using a second etchant to remove portions of material,which are not protected by both the third photoresist layer 8 and thefourth photoresist layer 9. The second etchant does not etch the ITOmaterial of both the first touch conductive layer 2 and the second touchconductive layer 4. In this embodiment, the second etchant at leastcontains iron nitrate Fe(NO₃)₃. The means for implementing the secondetching process is identical to the first etching process, so thedetails thereof will not be repeated here.

Finally, perform a second stripping process to remove the third andfourth photoresist layers 8, 9 on the substrate 1. The means forimplementing the second stripping process is identical to the firststripping process, so the details thereof will not be repeated here.

As shown in FIGS. 9 and 10, when the second stripping process has beenfinished, a first auxiliary conductive trail pattern 3P (please refer toFIG. 13) corresponding to the third photoresist trail pattern 8P isformed by etching the first auxiliary conductive layer 3 on the firstside 1A. And the first touch conductive trail pattern 2P formed by thefirst etching process is still kept on the first touch conductive layer2. The first auxiliary conductive trail pattern 3P at least includes apattern portion of a first micro auxiliary conductive unit 31 and apattern portion of a first auxiliary signal wire 32. Particularly, thefirst micro auxiliary conductive unit 31 is arranged in an area range ofthe first touch sensing electrode 21, and a shading rate of the firstmicro auxiliary conductive unit 21 is below 1%. At least part of thefirst auxiliary signal wire 32 is overlappingly formed in an area rangeof the first signal wire 22.

In addition, a second auxiliary conductive trail pattern 5Pcorresponding to the fourth photoresist trail pattern 9P is formed byetching the second auxiliary conductive layer 5 on the second side 1B.And the second touch conductive trail pattern 4P formed by the firstetching process is still kept on the second touch conductive layer 4.The second auxiliary conductive trail pattern 5P at least includes apattern portion of a second micro auxiliary conductive unit 51 and apattern portion of a second auxiliary signal wire 52. Particularly, thesecond micro auxiliary conductive unit 51 is arranged in an area rangeof the second touch sensing electrode 41, and a shading rate of thesecond micro auxiliary conductive unit 51 is below 1%. At least part ofthe second auxiliary signal wire 52 is overlappingly formed in an arearange of the second signal wire 42. In this embodiment, the first touchconductive trail pattern 2P, the first auxiliary conductive trailpattern 3P, the second touch conductive trail pattern 4P and the secondauxiliary conductive trail pattern 5P jointly constitute a capacitivetouch sensor.

According to the above description, the invention can reduce sheetresistance by means of disposing auxiliary conductive trail patterns 3P,5P on the touch conductive trail patterns 2P, 4P. In a visible area(approximately identical to an operative touch area) of the touchsensor, the micro auxiliary conductive units 31, 51 disposed on thetouch sensing electrodes 21, 41 are formed by opaque films, but theypossess a very low shading rate (below 1%), so the influence upon thevisibility of the touch sensing electrodes 21, 41 is minimal or evennegligible.

FIGS. 9-18 show a touch sensor made by the first embodiment of themanufacturing method of the invention. Its primary features are microauxiliary conductive units with high conductivity on touch sensingelectrodes and auxiliary conductive wires with high conductivityelectrically connected with signal wires. Thereby, sheet resistance ofthe touch sensing electrodes and conductive wires can be reduced. As aresult, the touch sensor has required impedance without decreasingoptical properties.

The following embodiment is a capacitive touch sensor as an example. Thetouch sensor includes a substrate 1, a first touch conductive layer 2, afirst auxiliary conductive layer 4, a second touch conductive layer 3and a second auxiliary conductive layer 5. Two opposite sides of thesubstrate 1 are separately disposed with a first touch conductive trailpattern 2P and a second touch conductive trail pattern 4P. The firsttouch conductive trail pattern 2P is electrically connected with a firstauxiliary trail pattern 3P. The second touch conductive trail pattern 4Pis electrically connected with a second auxiliary trail pattern 5P.

The substrate 1 is a plate with a dielectric property and hightransmittance and is made of glass, polycarbonate (PC), polyester (PET),polymethyl methacrylate (PMMA), or cycloolefin copolymer (COC), but notlimited to these, any other flexible, rigid or soft transparentmaterials are also available.

Both the first touch conductive layer 2 and the second touch conductivelayer 4 are two transparent conductive films made of an identicalmaterial, which may be, but not limited to, a metal oxide such as indiumtin oxide, indium zinc oxide, zinc aluminum oxide, tin antimony oxide orpolyethylene dioxythiophenethe or graphene. Preferably, a sheetresistance of each of the first touch conductive layer 2 and the secondtouch conductive layer 4 is between 80 and 150 ohm/sq. Both the firstauxiliary conductive layer 3 and the second auxiliary conductive layer 5are two opaque conductive films made of an identical material, which maybe, but not limited to, gold, silver, copper, aluminum, molybdenum,nickel or an alloy thereof. Preferably, sheet resistance of each of thefirst auxiliary conductive layer and the second auxiliary conductivelayer is between 0.05 and 0.2 ohm/sq. According to the abovementioned,the first auxiliary conductive layer 3 is less than the first touchconductive layer 2 in sheet resistance. Identically, the secondauxiliary conductive layer 5 is less than the second touch conductivelayer 4 in sheet resistance. In this embodiment, the substrate 1 adoptsglass material, and each of the first touch conductive layer 2 and thesecond touch conductive layer 4 adopts an indium tin oxide (ITO) filmwhich has been widely applied in touch panels, and each of the firstauxiliary conductive layer 3 and the second auxiliary conductive layer 5adopts a copper (Cu) film which possesses low impedance (greatconductivity) and cheap price.

The substrate 1 is defined with an operative touch area in a centralportion of the substrate 1 and an inoperative touch area surrounding theoperative touch area.

As shown in FIGS. 11 and 12, the first touch conductive layer 2 isdisposed on a first side 1A of the substrate 1 and has the first touchconductive trail pattern 2P with first touch sensing electrodes 21 andfirst signal wires 22. The first touch sensing electrodes 21 arediamonds arranged in the operative touch area and along a firstdirection (i.e. X-axis direction) and connected in series. At least oneend of each of the first touch sensing electrodes 21 connects with oneof the first signal wires 22. The first signal wires 22 are arranged inthe inoperative touch area.

As shown in FIGS. 11 and 13, the first auxiliary conductive layer 3 iselectrically attached on the first touch conductive layer 2 and has afirst auxiliary conductive trail pattern 3P formed in an area rangedefined by the first touch conductive trail pattern 2P. The firstauxiliary conductive trail pattern 3P includes first micro auxiliaryconductive units 31 and first auxiliary signal wires 32. The first microauxiliary conductive units 31 are overlappingly disposed in at leastpart of the first touch sensing electrodes 21. The first auxiliarysignal wires 32 are overlappingly formed in at least part of the firstsignal wires 22. The first micro auxiliary conductive unit 31 is a tinyconductive trail pattern formed by one or more of a nanometer-sizedpoint, linear or planar graphic element. FIGS. 14-17 depict severalexemplary embodiments of the tiny conductive trail pattern. To avoidobstructing the transmittance of the first touch sensing electrodes 21,the first micro auxiliary conductive units 31 are evenly distributed onsurfaces of the first touch sensing electrodes 21, and a shading rate ofthe first micro auxiliary conductive units 31 is below 1%, morepreferably, between 0.05%-0.2%. In this embodiment, the first microauxiliary conductive unit 31 is one or more metal wires, and a width ofthe metal wire is less than 8 μm, preferably, less than 5 μm. Also, thefirst micro auxiliary conductive unit 31 does not connect with the firstauxiliary signal wire 32.

Please refer to FIG. 18. The second touch conductive layer 4 is disposedon the second side 1B of the substrate 1 and has a second touchconductive trail pattern 4P with second touch sensing electrodes 41 andsecond signal wires 42. The second touch sensing electrodes 41 arediamonds arranged in the operative touch area and along a seconddirection (i.e. Y-axis direction) and connected in series. The firstdirection is orthogonal to the second direction. At least one end ofeach of the second touch sensing electrodes 41 connects with one of thesecond signal wires 42. The second signal wires 42 are arranged in theinoperative touch area.

The second auxiliary conductive layer 5 is electrically attached on thesecond touch conductive layer 4 and has a second auxiliary conductivetrail pattern 5P formed in an area range defined by the second touchconductive trail pattern 4P. The second auxiliary conductive trailpattern 5P includes second micro auxiliary conductive units 51 andsecond auxiliary signal wires 52. The second micro auxiliary conductiveunits 51 are overlappingly formed in at least part of the second touchsensing electrodes 41. The second auxiliary signal wires 52 areoverlappingly formed in at least part of the second signal wires 42. Thesecond micro auxiliary conductive unit 51 is a tiny conductive trailpattern with the same arrangement as the tiny conductive trail patternof the first micro auxiliary conductive unit 31 (as shown in FIGS.14-17). To avoid obstructing the transmittance of the second touchsensing electrodes 41, the second micro auxiliary conductive units 51are evenly distributed on surfaces of the second touch sensingelectrodes 41, and a shading rate of the second micro auxiliaryconductive units 51 is below 1%, more preferably, between 0.05%˜0.2%. Inthis embodiment, as shown in FIG. 18, the second micro auxiliaryconductive unit 51 is one or more metal wires, and a width of the metalwire is less than 8 μm, preferably, less than 5 μm. Also, the secondmicro auxiliary conductive units 51 does not connect with the secondauxiliary signal wire 52.

The first touch conductive trail pattern 2P, the first auxiliaryconductive trail pattern 3P, the second touch conductive trail pattern4P and the second auxiliary conductive trail pattern 5P jointlyconstitute a capacitive touch sensor. The first auxiliary conductivetrail pattern 3P is used for reducing a sheet resistance of the firsttouch conductive trail pattern 2P, and the second auxiliary conductivetrail pattern 5P is used for reducing a sheet resistance of the secondtouch conductive trail pattern 4P.

The Second Embodiment

The second embodiment of the manufacturing method of the invention isdepicted in FIGS. 19-27, and its steps are described below.

Please refer to FIG. 19. First, prepare a dielectric substrate 1 withhigh transmittance. A first touch conductive layer 2 and a firstauxiliary conductive layer 3 are superposed on a first side 1A of thedielectric substrate 1 in order. A second touch conductive layer 4 and asecond auxiliary conductive layer 5 on a second side 1B of thedielectric substrate 1 in order. The first side 1A and the second side1B are two opposite sides of the dielectric substrate 1.

The substrate 1 is made of glass, polycarbonate (PC), polyester (PET),polymethyl methacrylate (PMMA), or cycloolefin copolymer (COC), but notlimited to these, any other flexible, rigid or soft transparentmaterials are also available. Both the first touch conductive layer 2and the second touch conductive layer 4 are two transparent conductivefilms made of an identical material, which may be, but not limited to, ametal oxide such as indium tin oxide, indium zinc oxide, zinc aluminumoxide, tin antimony oxide or polyethylene dioxythiophenethe or graphene.Preferably, a sheet resistance of each of the first touch conductivelayer 2 and the second touch conductive layer 4 is between 80 and 150ohm/sq. Both the first auxiliary conductive layer 3 and the secondauxiliary conductive layer 5 are two opaque conductive films made of anidentical material, which may be, but not limited to, gold, silver,copper, aluminum, molybdenum, nickel or an alloy thereof. Preferably,sheet resistance of each of the first auxiliary conductive layer and thesecond auxiliary conductive layer is between 0.05 and 0.2 ohm/sq. Asabovementioned, the first auxiliary conductive layer 3 is less than thefirst touch conductive layer 2 in sheet resistance, and the firstauxiliary conductive layer 3 is electrically superposed on the firsttouch conductive layer 2. Identically, the second auxiliary conductivelayer 5 is less than the second touch conductive layer 4 in sheetresistance, and the second auxiliary conductive layer 5 is electricallysuperposed on the second touch conductive layer 4. In this embodiment,each of the first touch conductive layer 2 and the second touchconductive layer 4 adopts an indium tin oxide (ITO) film which has beenwidely applied in touch panels, and each of the first auxiliaryconductive layer 3 and the second auxiliary conductive layer 5 adopts acopper (Cu) film which possesses low impedance (great conductivity) andcheap price.

As shown in FIGS. 19 and 20, perform a first lithography process to thefirst side 1A of the substrate 1. The means for implementing the secondlithography process is identical to the abovementioned first lithographyprocess, so the details thereof will not be repeated here. A firstphotoresist trail pattern 6P can be developed to be formed on the firstphotoresist layer 6 by the first lithography process. In addition, asecond lithography process is performed on the second side 1B of thesubstrate 1. The means for implementing the second lithography processis identical to the first lithography process of the first embodiment,so the details thereof will not be repeated here. As a result, a secondphotoresist trail pattern 7P can be developed to be formed on the secondphotoresist layer 7 on the second side 1B.

Please refer to FIG. 21. Next, simultaneously perform a first etchingprocess to the first and second sides 1A, 1B of the substrate 1. Etchthe various conductive layers on the substrate 1 by using a firstetchant to remove portions of material, which are not protected by boththe first photoresist layer 6 and the second photoresist layer 7. Thefirst etchant is a complex etchant which can etch both the ITO materialof both the first touch conductive layer 2 and the second touchconductive layer 4 and the copper material of both the first auxiliaryconductive layer 3 and the second auxiliary conductive layer 5. In thisembodiment, the first etchant at least contains iron nitrate Fe(NO₃)₃and hydrochloric acid (HCl). The means for implementing the firstetching process is identical to the first etching process of the firstembodiment, so the details thereof will not be repeated here.

Next, perform a first stripping process to remove the first and secondphotoresist layers 6, 7 on the substrate 1. The means for implementingthe first stripping process is identical to the first stripping processof the first embodiment, so the details thereof will not be repeatedhere. As shown in FIG. 22, when the first stripping process has beenfinished, a first touch conductive trail pattern 2P corresponding to thefirst photoresist trail pattern 6P is formed by etching both the firsttouch conductive layer 2 and the first auxiliary conductive layer 3 onthe first side 1A. The first touch conductive trail pattern 2P at leastincludes a pattern portion of first touch sensing electrodes 21A, apattern portion of second touch sensing electrodes 21B and a patternportion of first signal wires 22. Both the first touch sensingelectrodes 21 and the second touch sensing electrodes 21B are parallellyarranged along a first direction (i.e. X-axis direction) at intervalsand connected in series, and at least one end of each of the first andsecond touch sensing electrodes 21A, 21B electrically connects with oneof the first signal wires 22. In addition, a second touch conductivetrail pattern 4P corresponding to the second photoresist trail pattern7P is formed by etching both the second touch conductive layer 4 and thesecond auxiliary conductive layer 5 on the second side 1B. The secondtouch conductive trail pattern 4P at least includes a pattern portion ofthird touch sensing electrodes 41A, a pattern portion of fourth touchsensing electrodes 41B and a pattern portion of a second signal wire 42.Both the third touch sensing electrodes 41A and the fourth touch sensingelectrodes 41B are parallelly arranged along a second direction (i.e.Y-axis direction) at intervals and connected in series, and at least oneend of each of the third and fourth touch sensing electrodes 41A, 41Belectrically connects with one of the second signal wires 42.

Please refer to FIGS. 23-24. Next, a third lithography process isperformed on the first side 1A of the substrate 1. The means forimplementing the third lithography process is identical to the firstlithography process of the first embodiment, so the details thereof willnot be repeated here. As a result, a third photoresist trail pattern 8Pcan be developed to be formed on the third photoresist layer 8 on thefirst side 1A. In addition, a fourth lithography process is performed onthe second side 1B of the substrate 1. The means for implementing thefourth lithography process is identical to the first lithography processof the first embodiment, so the details thereof will not be repeatedhere. As a result, a fourth photoresist trail pattern 9P can bedeveloped to be formed on the fourth photoresist layer 9 on the secondside 1B.

Please refer to FIG. 25. Next, simultaneously perform a second etchingprocess to the first and second sides 1A, 1B of the substrate 1. Etchthe first and the second auxiliary conductive layers 3, 5 on thesubstrate 1 by using a second etchant to remove portions of material,which are not protected by both the third photoresist layer 8 and thefourth photoresist layer 9. The second etchant does not etch the ITOmaterial of both the first touch conductive layer 2 and the second touchconductive layer 4. In this embodiment, the second etchant at leastcontains iron nitrate Fe(NO₃)₃. The means for implementing the secondetching process is identical to the first etching process of the firstembodiment, so the details thereof will not be repeated here.

Finally, perform a second stripping process to remove the third andfourth photoresist layers 8, 9 on the substrate 1. The means forimplementing the second stripping process is identical to the firststripping process of the first embodiment, so the details thereof willnot be repeated here.

As shown in FIGS. 26 and 27, when the second stripping process has beenfinished, a first auxiliary conductive trail pattern 3P corresponding tothe third photoresist trail pattern 8P is formed by etching the firstauxiliary conductive layer 3 on the first side 1A. And the first touchconductive trail pattern 2P formed by the first etching process is stillkept on the first touch conductive layer 2. The first auxiliaryconductive trail pattern 3P at least includes a pattern portion of firstmicro auxiliary conductive units 31 and a pattern portion of firstauxiliary signal wires 32. Particularly, the first micro auxiliaryconductive units 31 are arranged in an area range of both the firsttouch sensing electrodes 21A and the second touch sensing electrodes21B, and a shading rate of the first micro auxiliary conductive units 21A and the second touch sensing electrodes 21B is below 1%. At least partof the first auxiliary signal wire 32 is overlappingly formed in an arearange of the first signal wires 22.

In addition, a second auxiliary conductive trail pattern 5Pcorresponding to the fourth photoresist trail pattern 9P is formed byetching the second auxiliary conductive layer 5 on the second side 1B.And the second touch conductive trail pattern 4P formed by the firstetching process is still kept on the second touch conductive layer 4.The second auxiliary conductive trail pattern 5P at least includes apattern portion of second micro auxiliary conductive units 51 and apattern portion of second auxiliary signal wires 52. Particularly, thesecond micro auxiliary conductive units 51 are arranged in an area rangeof both the third touch sensing electrodes 41A and the fourth touchsensing electrode 41B, and a shading rate of the second micro auxiliaryconductive unit 51 is below 1%. At least part of the second auxiliarysignal wires 52 is overlappingly formed in an area range of the secondsignal wires 42.

In this embodiment, the first touch conductive trail pattern 2P, thefirst auxiliary conductive trail pattern 3P, the second touch conductivetrail pattern 4P and the second auxiliary conductive trail pattern 5Pjointly constitute two independent touch sensors. Both the first touchsensing electrodes 21A and the first micro auxiliary conductive units 31jointly constitute a first directional (X-axis direction) capacitivetouch sensing electrodes. Both the third touch sensing electrodes 41Aand the second micro auxiliary conductive units 51 jointly constitute asecond directional (Y-axis direction) capacitive touch sensingelectrodes. Both the first directional capacitive touch sensingelectrodes and the second directional capacitive touch sensingelectrodes jointly constitute a capacitive touch sensor. Both the secondtouch sensing electrodes 21B and the first micro auxiliary conductiveunits 31 jointly constitute a first directional (X-axis direction)electromagnetic touch sensing electrodes. Both the fourth touch sensingelectrodes 41B and the second micro auxiliary conductive units 51jointly constitute a second directional (Y-axis direction)electromagnetic touch sensing electrodes. Both the first directionalelectromagnetic touch sensing electrodes and the second directionalelectromagnetic touch sensing electrodes jointly constitute anelectromagnetic touch sensor.

The invention can reduce sheet resistance by means of disposingauxiliary conductive trail patterns 3P, 5P on the touch conductive trailpatterns 2P, 4P. In a visible area of the touch sensor, the microauxiliary conductive units 31, 51 disposed on the touch sensingelectrodes 21A, 21B, 41A and 41B possess a very low shading rate (below1%), so the influence upon the visibility is minimal or even negligible.

FIGS. 26-29 show a touch sensor made by the second embodiment of themanufacturing method of the invention. Its primary features are twoindependent touch sensors in a single touch sensor structure, microauxiliary conductive units with high conductivity on touch sensingelectrodes and auxiliary conductive wires with high conductivityelectrically connected with signal wires. Thereby, sheet resistance ofthe touch sensing electrodes and conductive wires can be reduced. As aresult, the touch sensor has required impedance without decreasingoptical properties.

The following embodiment is a capacitive-and-electromagnetic touchsensor as an example. The touch sensor includes a substrate 1, a firsttouch conductive layer 2, a first auxiliary conductive layer 4, a secondtouch conductive layer 3 and a second auxiliary conductive layer 5. Thesubstrate 1 is a plate with a dielectric property and hightransmittance. Both the first touch conductive layer 2 and the secondtouch conductive layer 4 are two transparent conductive films made of anidentical material such as ITO. A sheet resistance of each of the firsttouch conductive layer 2 and the second touch conductive layer 4 isbetween 80 and 150 ohm/sq. Both the first auxiliary conductive layer 3and the second auxiliary conductive layer 5 are two opaque conductivefilms made of an identical material such as copper. A sheet resistanceof each of the first auxiliary conductive layer and the second auxiliaryconductive layer is between 0.05 and 0.2 ohm/sq.

The substrate 1 is defined with an operative touch area in a centralportion of the substrate 1 and an inoperative touch area surrounding theoperative touch area.

As shown in FIGS. 26 and 28, the first touch conductive layer 2 isdisposed on a first side 1A of the substrate 1 and has the first touchconductive trail pattern 2P with first touch sensing electrodes 21A,second touch sensing electrodes 21B and first signal wires 22. Both thefirst touch sensing electrodes 21A and the second touch sensingelectrodes 21B are located in the operative touch area. The first touchsensing electrodes 21A are diamonds connected in series and the secondtouch sensing electrodes 21B are straight lines, and they both areparallelly arranged along a first direction (i.e. X-axis direction) atintervals. At least one end of each of the first touch sensingelectrodes 21A and the second touch sensing electrodes 21B connects withone of the first signal wires 22. The first signal wires 22 are arrangedin the inoperative touch area.

The first auxiliary conductive layer 3 is electrically attached on thefirst touch conductive layer 2 and has a first auxiliary conductivetrail pattern 3P formed in an area range defined by the first touchconductive trail pattern 2P. The first auxiliary conductive trailpattern 3P includes first micro auxiliary conductive units 31 and firstauxiliary signal wires 32. The first micro auxiliary conductive units 31are overlappingly disposed in at least part of both the first touchsensing electrodes 21A and the second touch sensing electrodes 21B.

The first auxiliary signal wires 32 are overlappingly formed in at leastpart of the first signal wires 22. The first micro auxiliary conductiveunit 31 is a tiny conductive trail pattern formed by one or more of ananometer-sized point, linear or planar graphic element. To avoidobstructing the transmittance of the first touch sensing electrodes 21,the first micro auxiliary conductive units 31 are evenly distributed onsurfaces of both the first touch sensing electrodes 21A and the secondtouch sensing electrodes 21B, and a shading rate thereof is below 1%,more preferably, between 0.05%˜0.2%. In this embodiment, the first microauxiliary conductive unit 31 is one or more metal wires, and a width ofthe metal wire is less than 8 μm, preferably, less than 5 μm. Also, thefirst micro auxiliary conductive unit 31 does not connect with the firstauxiliary signal wire 32.

Please refer to FIGS. 26 and 29. The second touch conductive layer 4 isdisposed on the second side 1B of the substrate 1 and has a second touchconductive trail pattern 4P with third touch sensing electrodes 41A,fourth touch sensing electrodes 41B and second signal wires 42. Thesecond touch sensing electrodes 41 are located in the operative toucharea. The third touch sensing electrodes 41A are diamonds connected inseries, the fourth touch sensing electrodes 41B are straight lines, theyboth are arranged parallelly along a second direction (i.e. Y-axisdirection). At least one end of each of the first and second touchsensing electrodes 41A, 41B connects with one of the second signal wires42. The second signal wires 42 are arranged in the inoperative toucharea.

The second auxiliary conductive layer 5 is electrically attached on thesecond touch conductive layer 4 and has a second auxiliary conductivetrail pattern 5P formed in an area range defined by the second touchconductive trail pattern 4P. The second auxiliary conductive trailpattern 5P includes second micro auxiliary conductive units 51 andsecond auxiliary signal wires 52. The second micro auxiliary conductiveunits 51 are overlappingly formed in both the third touch sensingelectrodes 41A and the fourth touch sensing electrodes 41B. The secondauxiliary signal wires 52 are overlappingly formed in at least part ofthe second signal wires 42. The second micro auxiliary conductive unit51 is a tiny conductive trail pattern with the same arrangement as thetiny conductive trail pattern of the first micro auxiliary conductiveunit 31. To avoid obstructing the transmittance of the second touchsensing electrodes 41, the second micro auxiliary conductive units 51are evenly distributed on surfaces of the second touch sensingelectrodes 41, and a shading rate thereof is below 1%, more preferably,between 0.05%˜0.2%. In this embodiment, as shown in FIG. 16, the secondmicro auxiliary conductive unit 51 is one or more metal wires, and awidth of the metal wire is less than 8 μm, preferably, less than 5 μm.Also, the second micro auxiliary conductive units 51 does not connectwith the second auxiliary signal wire 52.

The first touch conductive trail pattern 2P, the first auxiliaryconductive trail pattern 3P, the second touch conductive trail pattern4P and the second auxiliary conductive trail pattern 5P jointlyconstitute two independent touch sensors. In detail, both the firsttouch sensing electrodes 21A and the first micro auxiliary conductiveunits 31 jointly constitute a first directional (X-axis direction)capacitive touch sensing electrodes, and both the third touch sensingelectrodes 41A and the second micro auxiliary conductive units 51jointly constitute a second directional (Y-axis direction) capacitivetouch sensing electrodes. Both the first directional capacitive touchsensing electrodes and the second directional capacitive touch sensingelectrodes jointly constitute a capacitive touch sensor. Both the secondtouch sensing electrodes 21B and the first micro auxiliary conductiveunits 31 jointly constitute a first directional (X-axis direction)electromagnetic touch sensing electrodes. Both the fourth touch sensingelectrodes 41B and the second micro auxiliary conductive units 51jointly constitute a second directional (Y-axis direction)electromagnetic touch sensing electrodes. Both the first directionalelectromagnetic touch sensing electrodes and the second directionalelectromagnetic touch sensing electrodes jointly constitute anelectromagnetic touch sensor. The first auxiliary conductive trailpattern 3P is used for reducing a sheet resistance of the first touchconductive trail pattern 2P, and the second auxiliary conductive trailpattern 5P is used for reducing a sheet resistance of the second touchconductive trail pattern 4P.

It will be appreciated by persons skilled in the art that the aboveembodiments have been described by way of example only and not in anylimitative sense, and that various alterations and modifications arepossible without departure from the scope of the invention as defined bythe appended claims.

What is claimed is:
 1. A method for forming an auxiliary conductive uniton a transparent electrode of a touch sensor, comprising the steps of:a) preparing a conductive substrate: superposing a first touchconductive layer and a first auxiliary conductive layer on a first sideof a dielectric substrate in order, superposing a second touchconductive layer and a second auxiliary conductive layer on a secondside of the dielectric substrate in order, wherein the first side andthe second side are two opposite sides of the dielectric substrate, thefirst and second touch conductive layers are two transparent conductivefilms made of an identical material, the first and second auxiliaryconductive layers are two opaque conductive films made of an identicalmaterial, the first auxiliary conductive layer is less than the firsttouch conductive layer in sheet resistance, the first auxiliaryconductive layer is electrically superposed on the first touchconductive layer, the second auxiliary conductive layer is less than thesecond touch conductive layer in sheet resistance, and the secondauxiliary conductive layer is electrically superposed on the secondtouch conductive layer; b) performing a first lithography process:forming a first photoresist layer on the first side of the dielectricsubstrate, forming a first photoresist trail pattern on the firstphotoresist layer by development, the first photoresist trail patterncomprising a pattern portion of first touch sensing electrodes and apattern portion of first signal wires, wherein the first touch sensingelectrodes are arranged along a first direction and connected in series,and each of the first signal wires electrically connects with one of thefirst touch sensing electrodes; c) performing a second lithographyprocess: forming a second photoresist layer on the second side of thedielectric substrate, forming a second photoresist trail pattern on thesecond photoresist layer by development, the second photoresist trailpattern comprising a pattern portion of a second touch sensing electrodeand a pattern portion of a second signal wire, wherein the second touchsensing electrodes are arranged along a second direction and connectedin series, and the second signal wire electrically connects with thesecond touch sensing electrode; d) performing a first etching process:etching the first touch conductive layer, the first auxiliary conductivelayer, the second touch conductive layer and the second auxiliaryconductive layer by using a first etchant to remove portions ofmaterial, which are not protected by both the first photoresist layerand the second photoresist layer; e) performing a first strippingprocess: removing the first and second photoresist layers, forming afirst touch conductive trail pattern corresponding to the firstphotoresist trail pattern on both the first touch conductive layer andthe first auxiliary conductive layer on the first side of the dielectricsubstrate by etching, and forming a second touch conductive trailpattern corresponding to the second photoresist trail pattern on boththe second touch conductive layer and the second auxiliary conductivelayer on the second side of the dielectric substrate by etching; f)performing a third lithography process: forming a third photoresistlayer on the first side of the dielectric substrate, forming a thirdphotoresist trail pattern on the third photoresist layer by development,the third photoresist trail pattern comprising a pattern portion of afirst micro auxiliary conductive unit and a pattern portion of a firstauxiliary signal wire, wherein the first micro auxiliary conductive unitis disposed in an area range of the first touch sensing electrode, andat least part of the first auxiliary signal wire is overlappingly formedin an area range of the first signal wire; g) performing a fourthlithography process: forming a fourth photoresist layer on the secondside of the dielectric substrate, forming a fourth photoresist trailpattern on the fourth photoresist layer by development, the fourthphotoresist trail pattern comprising a pattern portion of a second microauxiliary conductive unit and a pattern portion of a second auxiliarysignal wire, wherein the second micro auxiliary conductive unit isdisposed in an area range of the second touch sensing electrode, and atleast part of the second auxiliary signal wire is overlappingly formedin an area range of the second signal wire; h) performing a secondetching process: etching both the first auxiliary conductive layer andthe second auxiliary conductive layer by using a second etchant toremove portions of material, which are not protected by both the thirdphotoresist layer and the fourth photoresist layer, wherein the secondetchant does not create an etching reaction with materials of both thefirst touch conductive layer and the second touch conductive layer; andi) performing a second stripping process: removing the third and fourthphotoresist layers, forming a first auxiliary conductive trail patterncorresponding to the third photoresist trail pattern on the firstauxiliary conductive layer on the first side of the dielectric substrateby etching, the first touch conductive trail pattern is kept on thefirst touch conductive layer, forming a second auxiliary conductivetrail pattern corresponding to the fourth photoresist trail pattern onthe second auxiliary conductive layer on the second side of thedielectric substrate by etching, the second touch conductive trailpattern is kept on the second touch conductive layer, wherein the firsttouch conductive trail pattern, the first auxiliary conductive trailpattern, the second touch conductive trail pattern and the secondauxiliary conductive trail pattern jointly constitute a touch sensor. 2.The method of claim 1, wherein a sheet resistance of each of the firsttouch conductive layer and the second touch conductive layer is between80 and 150 ohm/sq, and a sheet resistance of each of the first auxiliaryconductive layer and the second auxiliary conductive layer is between0.05 and 0.2 ohm/sq.
 3. The method of claim 1, wherein the first touchconductive layer and the second touch conductive layer are made ofindium tin oxide, indium zinc oxide, zinc aluminum oxide, tin antimonyoxide, or polyethylene dioxythiophene.
 4. The method of claim 1, whereinthe first auxiliary conductive layer and the second auxiliary conductivelayer are made of gold, silver, copper, aluminum, molybdenum, nickel oran alloy thereof.
 5. The method of claim 1, wherein the first etchant isa complex etchant for etching the first touch conductive layer, thesecond touch conductive layer, the first auxiliary conductive layer andthe second auxiliary conductive layer.
 6. The method of claim 1, whereinboth the first touch conductive layer and the second touch conductivelayer are formed by indium tin oxide, and both the first auxiliaryconductive layer and the second auxiliary conductive layer are formed bycopper.
 7. The method of claim 6, wherein the first etchant comprisesiron nitrate and hydrochloric acid, and the second etchant is ironnitrate.
 8. The method of claim 1, wherein both forming the firstphotoresist trail pattern on the first photoresist layer and forming thesecond photoresist trail pattern on the second photoresist layer areimplemented simultaneously.
 9. The method of claim 1, wherein bothforming the third photoresist trail pattern on the third photoresistlayer and forming the fourth photoresist trail pattern on the fourthphotoresist layer are implemented simultaneously.
 10. A method forforming an auxiliary conductive unit on a transparent electrode ofmultiple touch sensors, comprising the steps of: a) preparing aconductive substrate: superposing a first touch conductive layer and afirst auxiliary conductive layer on a first side of a dielectricsubstrate in order, superposing a second touch conductive layer and asecond auxiliary conductive layer on a second side of the dielectricsubstrate in order, wherein the first side and the second side are twoopposite sides of the dielectric substrate, the first and second touchconductive layers are two transparent conductive films made of anidentical material, the first and second auxiliary conductive layers aretwo opaque conductive films made of an identical material, the firstauxiliary conductive layer is less than the first touch conductive layerin sheet resistance, the first auxiliary conductive layer iselectrically superposed on the first touch conductive layer, the secondauxiliary conductive layer is less than the second touch conductivelayer in sheet resistance, and the second auxiliary conductive layer iselectrically superposed on the second touch conductive layer; b)performing a first lithography process: forming a first photoresistlayer on the first side of the dielectric substrate, forming a firstphotoresist trail pattern on the first photoresist layer by development,the first photoresist trail pattern comprising a pattern portion offirst touch sensing electrodes, a pattern portion of second touchsensing electrodes and a pattern portion of first signal wires, whereineach of the first touch sensing electrodes and the second touch sensingelectrodes are arranged parallelly along a first direction at intervalsand connected in series, and both at least one end of each of the firsttouch sensing electrodes and at least one end of each of the secondtouch sensing electrodes electrically connect with one of the firstsignal wires; c) performing a second lithography process: forming asecond photoresist layer on the second side of the dielectric substrate,forming a second photoresist trail pattern on the second photoresistlayer by development, the second photoresist trail pattern comprising apattern portion of third touch sensing electrodes, a pattern portion offourth touch sensing electrodes and a pattern portion of second signalwires, wherein each of the third touch sensing electrodes and the fourthtouch sensing electrodes are arranged parallelly along a first directionat intervals and connected in series, and both at least one end of eachof the third touch sensing electrodes and at least one end of each ofthe fourth touch sensing electrodes electrically connect with one of thesecond signal wires; d) performing a first etching process: etching thefirst touch conductive layer, the first auxiliary conductive layer, thesecond touch conductive layer and the second auxiliary conductive layerby using a first etchant to remove portions of material, which are notprotected by both the first photoresist layer and the second photoresistlayer; e) performing a first stripping process: removing the first andsecond photoresist layers, forming a first touch conductive trailpattern corresponding to the first photoresist trail pattern on both thefirst touch conductive layer and the first auxiliary conductive layer onthe first side of the dielectric substrate by etching, and forming asecond touch conductive trail pattern corresponding to the secondphotoresist trail pattern on both the second touch conductive layer andthe second auxiliary conductive layer on the second side of thedielectric substrate by etching; f) performing a third lithographyprocess: forming a third photoresist layer on the first side of thedielectric substrate, forming a third photoresist trail pattern on thethird photoresist layer by development, the third photoresist trailpattern comprising a pattern portion of first micro auxiliary conductiveunits and a pattern portion of first auxiliary signal wires, wherein thefirst micro auxiliary conductive units are disposed in an area range ofthe first and second touch sensing electrodes, and at least part of thefirst auxiliary signal wires is overlappingly formed in an area range ofthe first signal wires; g) performing a fourth lithography process:forming a fourth photoresist layer on the second side of the dielectricsubstrate, forming a fourth photoresist trail pattern on the fourthphotoresist layer by development, the fourth photoresist trail patterncomprising a pattern portion of second micro auxiliary conductive unitsand a pattern portion of second auxiliary signal wires, wherein thesecond micro auxiliary conductive units are disposed in an area range ofthe third and fourth touch sensing electrodes, and at least part of thesecond auxiliary signal wires is overlappingly formed in an area rangeof the second signal wires; h) performing a second etching process:etching both the first auxiliary conductive layer and the secondauxiliary conductive layer by using a second etchant to remove portionsof material, which are not protected by both the third photoresist layerand the fourth photoresist layer, wherein the second etchant does notcreate an etching reaction with materials of both the first touchconductive layer and the second touch conductive layer; and i)performing a second stripping process: removing the third and fourthphotoresist layers, forming a first auxiliary conductive trail patterncorresponding to the third photoresist trail pattern on the firstauxiliary conductive layer on the first side of the dielectric substrateby etching, the first touch conductive trail pattern is kept on thefirst touch conductive layer, forming a second auxiliary conductivetrail pattern corresponding to the fourth photoresist trail pattern onthe second auxiliary conductive layer on the second side of thedielectric substrate by etching, the second touch conductive trailpattern is kept on the second touch conductive layer, wherein the firsttouch conductive trail pattern, the first auxiliary conductive trailpattern, the second touch conductive trail pattern and the secondauxiliary conductive trail pattern jointly constitute at least two touchsensors.
 11. The method of claim 10, wherein a sheet resistance of eachof the first touch conductive layer and the second touch conductivelayer is between 80 and 150 ohm/sq, and a sheet resistance of each ofthe first auxiliary conductive layer and the second auxiliary conductivelayer is between 0.05 and 0.2 ohm/sq.
 12. The method of claim 10,wherein the first touch conductive layer and the second touch conductivelayer are made of indium tin oxide, indium zinc oxide, zinc aluminumoxide, tin antimony oxide, or polyethylene dioxythiophene.
 13. Themethod of claim 10, wherein the first auxiliary conductive layer and thesecond auxiliary conductive layer are made of gold, silver, copper,aluminum, molybdenum, nickel or an alloy thereof.
 14. The method ofclaim 10, wherein the first etchant is a complex etchant for etching thefirst touch conductive layer, the second touch conductive layer, thefirst auxiliary conductive layer and the second auxiliary conductivelayer.
 15. The method of claim 10, wherein both the first touchconductive layer and the second touch conductive layer are formed byindium tin oxide, and both the first auxiliary conductive layer and thesecond auxiliary conductive layer are formed by copper.
 16. The methodof claim 15, wherein the first etchant comprises iron nitrate andhydrochloric acid, and the second etchant is iron nitrate.
 17. Themethod of claim 10, wherein both forming the first photoresist trailpattern on the first photoresist layer and forming the secondphotoresist trail pattern on the second photoresist layer areimplemented simultaneously.
 18. The method of claim 10, wherein bothforming the third photoresist trail pattern on the third photoresistlayer and forming the fourth photoresist trail pattern on the fourthphotoresist layer are implemented simultaneously.
 19. The method ofclaim 10, wherein both the first touch sensing electrodes and the firstmicro auxiliary conductive units jointly constitute a first directionalcapacitive touch sensing electrodes, both the third touch sensingelectrodes and the second micro auxiliary conductive units jointlyconstitute a second directional capacitive touch sensing electrodes, andboth the first directional capacitive touch sensing electrodes and thesecond directional capacitive touch sensing electrodes jointlyconstitute a capacitive touch sensor.
 20. The method of claim 10,wherein both the second touch sensing electrodes and the first microauxiliary conductive units jointly constitute a first directionalelectromagnetic touch sensing electrodes, both the fourth touch sensingelectrodes and the second micro auxiliary conductive units jointlyconstitute a second directional electromagnetic touch sensingelectrodes, and both the first directional electromagnetic touch sensingelectrodes and the second directional electromagnetic touch sensingelectrodes jointly constitute an electromagnetic touch sensor.